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SSS7N60B N-Channel MOSFET

SSS7N60B Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SSS7N60B *.

SSS7N60B Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SSS7N60B Applications

* Switching applications
* Load switch
* Power management
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 7.0 4.4 28 PD Total Dissipa

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Datasheet Details

Part number
SSS7N60B
Manufacturer
INCHANGE
File Size
196.76 KB
Datasheet
SSS7N60B-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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