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SSS70N10A

Advanced Power MOSFET

SSS70N10A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ.) Ο SSS70N10A BVDSS = 100 V RDS(on) = 0.023 Ω ID = 28 A TO-22

SSS70N10A Datasheet (290.43 KB)

Preview of SSS70N10A PDF

Datasheet Details

Part number:

SSS70N10A

Manufacturer:

Fairchild Semiconductor

File Size:

290.43 KB

Description:

Advanced power mosfet.

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SSS70N10A Advanced Power MOSFET Fairchild Semiconductor

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