Datasheet4U Logo Datasheet4U.com

TIP150 NPN Transistor

TIP150 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 2. Minimu.

TIP150 Applications

* Designed for use in automotive ignition,switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous

📥 Download Datasheet

Preview of TIP150 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
TIP150
Manufacturer
INCHANGE
File Size
214.04 KB
Datasheet
TIP150-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • TIP151 - NPN SILICON POWER DARLINGTONS (Power Innovations Limited)
  • TIP152 - NPN SILICON POWER DARLINGTONS (Power Innovations Limited)
  • TIP100 - NPN Epitaxial Silicon Transistor (SemiHow)
  • TIP101 - NPN Epitaxial Silicon Transistor (SemiHow)
  • TIP102 - NPN Epitaxial Silicon Transistor (SemiHow)
  • TIP105 - Darlington PNP Power Transistors (TAITRON)
  • TIP106 - Darlington PNP Power Transistors (TAITRON)
  • TIP107 - Darlington PNP Power Transistors (TAITRON)

📌 All Tags

INCHANGE TIP150-like datasheet