TIP150 Datasheet - INCHANGE

TIP150, NPN Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) *Collector-Emitter Satur

Applications

* Designed for use in automotive ignition,switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous

TIP150-INCHANGE.pdf