TIP151 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 2. Minimu.

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Datasheet Specifications

Part number: TIP151
Manufacturer: INCHANGE
File Size: 212.42 KB
Datasheet: TIP151-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in automotive ignition,switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous

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TIP151 NPN Transistor INCHANGE

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