TIP31A NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors .
Collector-Emitter Saturation Voltage- : VCE(sat) = 1. Collector-Emitter Breakdown Voltage- : V(BR) CEO= 60V(Min). Complem.

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Datasheet Specifications

Part number: TIP31A
Manufacturer: INCHANGE
File Size: 206.63 KB
Datasheet: TIP31A-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO IC ICM IB PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Co

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TIP31A NPN Transistor INCHANGE

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