TIP3055F NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor isc Product Specification TIP3055F .
Excellent Safe Operating Area. DC Current Gain- : hFE=20-70@IC = 4A. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: TIP3055F
Manufacturer: INCHANGE
File Size: 198.49 KB
Datasheet: TIP3055F-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-base Voltage 7 V IC Collector Current-Continuous 15 A IB Base C

TIP3055F Distributors

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TIP3055F NPN Transistor INCHANGE

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