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TIP3055F NPN Transistor

TIP3055F Description

isc Silicon NPN Power Transistor isc Product Specification TIP3055F .
Excellent Safe Operating Area. DC Current Gain- : hFE=20-70@IC = 4A. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

TIP3055F Applications

* Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-base Voltage 7 V IC Collector Current-Continuous 15 A IB Base C

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Datasheet Details

Part number
TIP3055F
Manufacturer
INCHANGE
File Size
198.49 KB
Datasheet
TIP3055F-INCHANGE.pdf
Description
NPN Transistor

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INCHANGE TIP3055F-like datasheet