TIP3055T Datasheet - Inchange Semiconductor

TIP3055T, Silicon NPN Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION *Excellent Safe Operating Area *DC Current Gain- : hFE=20-70@IC = 4A *Collector-Emitter Satur

Applications

* Designed for general-purpose switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-base Voltage 5 V IC Collector Current-Continuous 10 A IC Collect

TIP3055T-InchangeSemiconductor.pdf