TIP122 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= 3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min). Low Collector-Emitter Sat.

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Datasheet Specifications

Part number: TIP122
Manufacturer: Inchange Semiconductor
File Size: 209.74 KB
Datasheet: TIP122-InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5

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TIP122 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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