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TIP131 - Silicon NPN Darlington Power Transistor

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Part number TIP131
Manufacturer Inchange Semiconductor
File Size 212.76 KB
Description Silicon NPN Darlington Power Transistor
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Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A Complement to Type TIP136 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V

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