TIP127 Silicon PNP Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= -3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min). Low Collector-Emitter S.

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Datasheet Specifications

Part number: TIP127
Manufacturer: Inchange Semiconductor
File Size: 213.58 KB
Datasheet: TIP127-InchangeSemiconductor.pdf
Description: Silicon PNP Darlington Power Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -5 ICM Collec

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TIP127 Silicon PNP Darlington Power Transistor Inchange Semiconductor

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