TIP130 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= 4A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min). Low Collector-Emitter Satu.

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Datasheet Specifications

Part number: TIP130
Manufacturer: Inchange Semiconductor
File Size: 212.98 KB
Datasheet: TIP130_InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A I

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TIP130 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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