TIP30D Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors .
DC Current Gain -hFE = 25(Min)@ IC= 1A. Collector-Emitter Breakdown Voltage- : V(BR) CEO= 120V(Min). Complement to Type TIP32D. Minim.

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Datasheet Specifications

Part number: TIP30D
Manufacturer: Inchange Semiconductor
File Size: 210.05 KB
Datasheet: TIP30D-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM

TIP30D Distributors

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TIP30D Silicon PNP Power Transistor Inchange Semiconductor

Inchange Semiconductor TIP30D-like datasheet