TIP31C NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors INCHANGE Semiconductor TIP31C .
DC Current Gain -hFE = 25(Min)@ IC= 1A. Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min). Complement to Type TIP32C. Minim.

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Datasheet Specifications

Part number: TIP31C
Manufacturer: INCHANGE
File Size: 206.14 KB
Datasheet: TIP31C-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM

TIP31C Distributors

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TIP31C NPN Transistor INCHANGE

INCHANGE TIP31C-like datasheet