TK5A90E - N-Channel MOSFET
TK5A90E Features
* Low drain-source on-resistance: RDS(on) ≤3.1Ω.
* Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.45mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSOLUTE MAX
