TK5A53D Datasheet - Toshiba Semiconductor

TK5A53D N-Channel MOSFET

TK5A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A53D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A 2.54 0.64 ± 0.15 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω(typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) Enhancement mode: Vth = 2.4 to 4.4 V .

TK5A53D Features

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TK5A53D-ToshibaSemiconductor.pdf