TK5A65DA - Silicon N-Channel MOSFET
TK5A65DA Features
* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.34 Ω (typ.) High forward transfer admittance: |Yfs| = 3.1 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (
