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TK50A04K3 Datasheet - Toshiba Semiconductor

TK50A04K3 MOSFETs

TK50A04K3 Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (N

TK50A04K3 Datasheet (221.58 KB)

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Datasheet Details

Part number:

TK50A04K3

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

221.58 KB

Description:

Mosfets.

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TK50A04K3 MOSFETs Toshiba Semiconductor

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