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TK50P03M1 Datasheet - Toshiba Semiconductor

TK50P03M1 Silicon N-Channel MOSFET

TK50P03M1 Features

* (1) High-speed switching (2) Low gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK

TK50P03M1 Datasheet (304.02 KB)

Preview of TK50P03M1 PDF

Datasheet Details

Part number:

TK50P03M1

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

304.02 KB

Description:

Silicon n-channel mosfet.

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TK50P03M1 Silicon N-Channel MOSFET Toshiba Semiconductor

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