* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maxim
TK50F15J1 Datasheet (321.88 KB)
TK50F15J1
Toshiba ↗ Semiconductor
321.88 KB
Mosfets.
TK50F15J1
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK50F15J1
1. Applications
*
* Switching Voltage Regulators DC-DC Converters
2. Fe.
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