TK50J30D - Silicon N-Channel MOSFET

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Toshiba Semiconductor

Part number	TK50J30D
Manufacturer	Toshiba Semiconductor
File Size	233.92 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK50J30D Datasheet
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(1) Low drain-source on-resistance: RDS(ON) = 0.04 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK50J30D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 300 V Gate-source voltage Drain current (DC) Drain current (pulsed) P.

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Published: Sep 20, 2014 |