Part number:
TK50J30D
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
233.92 KB
Description:
Silicon n-channel mosfet.
TK50J30D Datasheet (233.92 KB)
* (1) Low drain-source on-resistance: RDS(ON) = 0.04 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK50J30D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-3P(N) 4. Absolute
TK50J30D Datasheet (233.92 KB)
TK50J30D
Toshiba ↗ Semiconductor
233.92 KB
Silicon n-channel mosfet.
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