TK50P04M1 - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK50P04M1
Manufacturer	Toshiba ↗ Semiconductor
File Size	274.43 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK50P04M1_ToshibaSemiconductor.pdf

(1) High-speed switching (2) Low gate charge: QSW = 9.4 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 6.7 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK50P04M1 DPAK 1: Gate 2: Drain (heatsink) 3: Source ©2016 Toshiba Corporation 1 Start of commercial production 2009-02 2016-02-17 Rev.5.0 TK50P04M1 4. Absolute Maximum Ratings (Note) (Ta = 25 u.

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Published: Jul 21, 2010 |