* (1) High-speed switching (2) Low gate charge: QSW = 9.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 6.7 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK
TK50P04M1 Datasheet (274.43 KB)
TK50P04M1
Toshiba ↗ Semiconductor
274.43 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK50P04M1
1. Applications
* Switching Voltage Regulators
* Motor Drivers
* Power Mana.
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