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TK5A80E - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK5A80E
Manufacturer	Toshiba ↗
File Size	389.24 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK5A80E-Toshiba.pdf

TK5A80E Product details

Features

(1) Low drain-source on-resistance : RDS(ON) = 1.9 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK5A80E 1 : Gate 2 : Drain 3 : Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse.

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Published: Jan 2, 2024 |