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TK5A90E Datasheet - Toshiba

TK5A90E N-Channel MOSFET

TK5A90E Features

* (1) Low drain-source on-resistance : RDS(ON) = 2.5 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK5A90E 1 : Gate 2 : Drain 3 : Source TO-220SIS 4. Absolute Maximum Rating

TK5A90E-Toshiba.pdf

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Datasheet Details

Part number:

TK5A90E

Manufacturer:

Toshiba ↗

File Size:

388.93 KB

Description:

N-channel mosfet.

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TK5A90E TK5A90E N-Channel MOSFET Toshiba

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