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TK560A60Y

Silicon N-Channel MOSFET

TK560A60Y Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.43 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.24mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Rating

TK560A60Y Datasheet (444.34 KB)

Preview of TK560A60Y PDF

Datasheet Details

Part number:

TK560A60Y

Manufacturer:

Toshiba ↗

File Size:

444.34 KB

Description:

Silicon n-channel mosfet.

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TK560A60Y Silicon N-Channel MOSFET Toshiba

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