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TK560P60Y

Silicon N-Channel MOSFET

TK560P60Y Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.43 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.24 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4. Absolute Maximum Ratings (N

TK560P60Y Datasheet (448.77 KB)

Preview of TK560P60Y PDF

Datasheet Details

Part number:

TK560P60Y

Manufacturer:

Toshiba ↗

File Size:

448.77 KB

Description:

Silicon n-channel mosfet.

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TK560P60Y Silicon N-Channel MOSFET Toshiba

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