TK65G10N1 Datasheet - INCHANGE

TK65G10N1, N-Channel MOSFET

isc N-Channel MOSFET Transistor TK65G10N1 *

Features

* Low drain-source on-resistance: RDS(on) ≤4.5mΩ.
(VGS = 10 V)
* Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators

Applications

* of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

TK65G10N1-INCHANGE.pdf