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TK65G10N1 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number: TK65G10N1
Manufacturer: INCHANGE
File Size: 255.16 KB
Datasheet: TK65G10N1-INCHANGE.pdf
Description: N-Channel MOSFET

TK65G10N1 Product details

Features

Low drain-source on-resistance: RDS(on) ≤4.5mΩ. (VGS = 10 V).
Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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