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TK8P65W N-Channel MOSFET

TK8P65W Description

isc N-Channel MOSFET Transistor TK8P65W *.

TK8P65W Features

* Drain Current ID= 7.8A@ TC=25℃
* Drain Source Voltage- : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.67Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

TK8P65W Applications

* Switching power supplies,converters,AC and DC motor controls
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.8 A IDM Drain Current-Single Plused 31.2 A

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Datasheet Details

Part number
TK8P65W
Manufacturer
INCHANGE
File Size
227.21 KB
Datasheet
TK8P65W-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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