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TK8P25DA

Silicon N-Channel MOSFET

TK8P25DA Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK8P25DA DPAK 1: Gate 2: Drain (Heatsink) 3: Source ©2015 Toshiba Corporation

TK8P25DA Datasheet (268.42 KB)

Preview of TK8P25DA PDF

Datasheet Details

Part number:

TK8P25DA

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

268.42 KB

Description:

Silicon n-channel mosfet.

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TAGS

TK8P25DA Silicon N-Channel MOSFET Toshiba Semiconductor

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