TK8P60W5 - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK8P60W5
Manufacturer	Toshiba Semiconductor
File Size	287.67 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK8P60W5-ToshibaSemiconductor.pdf

(1) Fast reverse recovery time: trr = 80 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.44 Ω (typ. ) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit TK8P60W5 DPAK 1: Gate 2: Drain (Heat Sink) 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2015-08 2015-10-22 Rev.6.0 TK8P60W5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless oth.

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Published: Sep 5, 2014 |