NJ26 Datasheet - INTERFET

NJ26 Silicon Junction Field-Effect Transistor

F-8 01/99 NJ26 Process Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ26A Process. Datasheet 2N4416, 2N4416A 2N5484, 2N5485 2N5486 J304, J305 VCR11N www.DataSheet4U.com At 25°C fre.

NJ26 Datasheet (149.37 KB)