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NJ26L Datasheet - InterFET

NJ26L_InterFET.pdf

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Datasheet Details

Part number:

NJ26L

Manufacturer:

InterFET

File Size:

149.74 KB

Description:

Silicon junction field-effect transistor low-noise high gain amplifier.

NJ26L, Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier

F-12 01/99 NJ26L Process Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Bond Pads = 0.004" Sq.

Substrate is also Gate.

Devices in this Databook based on the NJ26L Process.

Datasheet 2N5397, 2N5398 J210, J211, J212 www.DataSheet4U.com At 25°C free air temperature: Sta

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