NJ26L Datasheet - InterFET

NJ26L Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier

F-12 01/99 NJ26L Process Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ26L Process. Datasheet 2N5397, 2N5398 J210, J211, J212 www.DataSheet4U.com At 25°C free air temperature: Sta.

NJ26L Datasheet (149.74 KB)