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NJ26A Datasheet - InterFET

NJ26A Silicon Junction Field-Effect Transistor

F-10 01/99 NJ26A Process Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. Devices in this Databook based on the NJ26A Process. Datasheet 2N4416, 2N4416A www.DataSheet4U.com At 25°C free air.

NJ26A Datasheet (148.92 KB)

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Datasheet Details

Part number:

NJ26A

Manufacturer:

InterFET

File Size:

148.92 KB

Description:

Silicon junction field-effect transistor.

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NJ26A Silicon Junction Field-Effect Transistor InterFET

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