NJ26A Datasheet (InterFET) - Silicon Junction Field-Effect Transistor

NJ26A, Silicon Junction Field-Effect Transistor

F-10 01/99 NJ26A Process Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate.

Devices in this Databook based on the NJ26A Process.

Datasheet 2N4416, 2N4416A www.DataSheet4U.com At 25°C free air