NJ30 Datasheet - INTERFET

NJ30 Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier

F-14 01/99 NJ30 Process Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. This process available for customer-specified applications. www.DataSheet4U.com At 25°C free air temperature: Static.

NJ30_INTERFET.pdf

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Datasheet Details

Part number:

NJ30

Manufacturer:

INTERFET

File Size:

119.86 KB

Description:

Silicon junction field-effect transistor low-noise high gain amplifier.

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NJ30 NJ30 Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier INTERFET