NJ30 Datasheet (INTERFET) - Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier

NJ30, Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier

F-14 01/99 NJ30 Process Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate.

This process available for customer-specified applications.