NJ36D Datasheet (InterFET) - Silicon Junction Field-Effect Transistor

NJ36D, Silicon Junction Field-Effect Transistor

F-22 01/99 NJ36D Process Silicon Junction Field-Effect Transistor Monolithic Dual Construction High Frequency Amplifier Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C S D G Die Size = 0.026" X 0.026" All Bond Pads = 0.004" Sq.

Substrate is also Gate.

G D S Devices in this Databook based on the NJ36D Process.

Datasheet 2N5911, 2N5912 IFN5911, IFN5912