NJ3600L Datasheet (InterFET) - Silicon Junction Field-Effect Transistor Large Capacitance Detector Pre-Amplifier

NJ3600L, Silicon Junction Field-Effect Transistor Large Capacitance Detector Pre-Amplifier

F-48 01/99 NJ3600L Process Silicon Junction Field-Effect Transistor Large Capacitance Detector Pre-Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C S-D S-D S-D G Device in this Databook based on the NJ3600L Process.

Datasheet IF3601 IF3602 G D-S D-S D-S Die Size = 0.074" X 0.074" All Bond Pads ≥ 0.004" Sq.

Substrate is also Gate.