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IRFR9310 Power MOSFET

IRFR9310 Description

PD 9.1663 PRELIMINARY l l l l l l IRFR/U9310 HEXFET® Power MOSFET D P-Channel Surface Mount (IRFR9310) Straight Lead (IRFU9310) Advanced Process Te.
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area.

IRFR9310 Features

* A M B NOT ES: 0.58 (.023) 0.46 (.018) 2.28 (.090) 4.57 (.180) 1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS ION : INCH. 3 CO NFO RMS T O JEDE C O UTLINE TO -252AA . 4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP , SO LDER DIP MA X. +0.16 (.006). Part Markin

IRFR9310 Applications

* The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P a k T O -2 52 A A

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Datasheet Details

Part number
IRFR9310
Manufacturer
IRF
File Size
116.79 KB
Datasheet
IRFR9310_IRF.pdf
Description
Power MOSFET

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