IRFS510A - Advanced Power MOSFET
IRFS510A Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) 1 Ο IRFS510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 4.5 A TO-2
