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IRFSL3307 - HEXFET Power MOSFET

IRF

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Datasheet Details

Part number	IRFSL3307
Manufacturer	IRF
File Size	412.49 KB
Description	HEXFET Power MOSFET
Datasheet	IRFSL3307_IRF.pdf

IRFSL3307 Product details

Features

e power dissipation per single avalanche pulse. 150 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 100 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. 50 D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°.

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Published: Aug 16, 2005 |