IRFSL3307 Datasheet (IRF) - HEXFET Power MOSFET

IRFSL3307, HEXFET Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96901A IRFB3307 IRFS3307 IRFSL3307 HEXFET® Power MOSFET D VDSS RDS(on) typ.

max.

S ID 75V 5.0m: 6.3m: 130A G DS TO-220AB IRFB3307 G DS D2Pak IRFS3307

IRFSL3307 Features

* e power dissipation per single avalanche pulse. 150 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 100 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav =