Datasheet Specifications
- Part number
- IRFSL3307
- Manufacturer
- IRF
- File Size
- 412.49 KB
- Datasheet
- IRFSL3307_IRF.pdf
- Description
- HEXFET Power MOSFET
Description
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High .
Features
* e power dissipation per single avalanche pulse. 150 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 100 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav =Applications
* l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dtIRFSL3307 Distributors
📁 Related Datasheet
📌 All Tags