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IRFSL3307

HEXFET Power MOSFET

IRFSL3307 Features

* e power dissipation per single avalanche pulse. 150 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 100 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav =

IRFSL3307 Datasheet (412.49 KB)

Preview of IRFSL3307 PDF

Datasheet Details

Part number:

IRFSL3307

Manufacturer:

IRF

File Size:

412.49 KB

Description:

Hexfet power mosfet.
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High .

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TAGS

IRFSL3307 HEXFET Power MOSFET IRF

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