IRFSL3207 - HEXFET Power MOSFET

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IRF

Part number	IRFSL3207
Manufacturer	IRF
File Size	385.00 KB
Description	HEXFET Power MOSFET
Datasheet	IRFSL3207 Datasheet
Additional preview pages of the IRFSL3207 datasheet.

ow based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13).

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Published: Aug 16, 2005 |