IRFSL11N50A

HEXFET Power MOSFET

IRF

IRFSL11N50A Features

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IRFSL11N50A General Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR d.

IRFSL11N50A Datasheet (123.56 KB)

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Datasheet Details

Part number:

IRFSL11N50A

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IRF

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123.56 KB

Description:

Hexfet power mosfet.
PD- 91847A IRFSL11N50A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive.

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IRFSL11N50A HEXFET Power MOSFET IRF

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IRFSL11N50A Features

IRFSL11N50A General Description

Datasheet Details

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