IRHM7Z60 Datasheet - IRF

IRHM7Z60 Radiation Hardened Power MOSFET

PD - 91701B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si) RDS(on) 0.014Ω 0.014Ω 0.014Ω 0.014Ω ID 35 A 35 A 35 A 35 A IRHM7Z60 30V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY ™ ® TO-254AA International Rectifier’s RAD-Hard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven perfo.

IRHM7Z60 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC

IRHM7Z60 Datasheet (131.59 KB)