IS34MC01GA08 Datasheet - ISSI

IS34MC01GA08 - 3.3V 1Gb SLC NAND Flash Memory

Offered in 128Mx8 / 64Mx16 bits, this device is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V VCC. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 200us on the 2,112-byte(x8) or 1,056-w.

IS34MC01GA08 Features

* Voltage Supply:

* 3.3V Device: 2.7 V ~ 3.6V

* Operating Temperature:

* Industrial: -40 ~ 85℃

* Organization

* Memory Cell Array: (128M + 4M) x 8bit

* Data Register: (2K + 64) x 8bit

* Automatic Program and Erase

* Page Program: (2K + 64) bytes

IS34MC01GA08-ISSI.pdf