IS3405 Datasheet - FORESEE

IS3405 P-Channel Enhancement Mode MOSFET

ST I S 3405 S ep.15 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S ID -3A F E AT UR E S ( m W ) Max R DS (ON) S uper high dense cell design for low R DS (ON ). -30V 100 @ V G S = -10V 130 @ V G S = -4.5V R ugged and reliable. S OT-23 P ackage. D S OT-23 D S G G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C b -P ulsed Drain-S ource Diode.

IS3405-FORESEE.pdf