IS34ML04G084 - 4Gb(x8) 3.3V NAND FLASH MEMORY

ISSI

Datasheet Details

Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell.
Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms.
typical.
Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V.

📁 Related Datasheet

IS3403 - P-Channel Enhancement Mode MOSFET (FORESEE)
IS3405 - P-Channel Enhancement Mode MOSFET (FORESEE)
IS341W - Photocoupler (ISOCOM)
IS3020 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ISOCOM)
IS3021 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ISOCOM)
IS3022 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ISOCOM)
IS3051 - Photocoupler (ISOCOM)
IS3052 - Photocoupler (ISOCOM)

📌 All Tags

ISSI IS34ML04G084-like datasheet

IS34ML04G084 Stock/Price