IS45R83200D, IS42R83200D - 256-MBIT SYNCHRONOUS DRAM

ISSI

IS45R83200D Datasheet Preview — This datasheet PDF includes multiple part numbers: IS45R83200D, IS42R83200D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	IS45R83200D, IS42R83200D
Manufacturer	ISSI
File Size	926.82 KB
Description	256-MBIT SYNCHRONOUS DRAM
Datasheet	IS42R83200D-ISSI.pdf
Note	This datasheet PDF includes multiple part numbers: IS45R83200D, IS42R83200D. Please refer to the document for exact specifications by model.

IS45R83200D Product details

Description

A0-A12 Row Address Input A0-A9 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ7 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command WE DQM Vdd Vss Vddq Vssq NC Write Enable Data Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection Integrated Silicon Solution, Inc. www.issi.com Rev. A 03/02/2010 3 IS42R83200D, I

Features

Clock frequency: 133, 100 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Single Power supply: 2.5V + 0.2V.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Auto Refresh (CBR).
Self Refresh.
8K refresh cycles every 16 ms (A2 grade) or 64 ms (com.

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Published: Aug 1, 2016 |