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IS45VM32400E

128Mb Mobile Synchronous DRAM

IS45VM32400E Features

* Fully synchronous; all signals referenced to a positive clock edge

* Internal bank for hiding row access and pre- charge

* Programmable CAS latency: 2, 3

* Programmable Burst Length: 1, 2, 4, 8, and Full Page

* Programmable Burst Sequence:

* Se

IS45VM32400E General Description

ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 128Mb Mobile Synchronous DRAM is designed to minimize current.

IS45VM32400E Datasheet (383.88 KB)

Preview of IS45VM32400E PDF

Datasheet Details

Part number:

IS45VM32400E

Manufacturer:

ISSI

File Size:

383.88 KB

Description:

128mb mobile synchronous dram.

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IS45VM32400E 128Mb Mobile Synchronous DRAM ISSI

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