IS62WV12816DALL - ULTRA LOW POWER CMOS STATIC RAM

ISSI

IS62WV12816DALL Datasheet Preview — Preview of IS62WV12816DALL PDF

Datasheet Details

Part number	IS62WV12816DALL
Manufacturer	ISSI
File Size	415.50 KB
Description	ULTRA LOW POWER CMOS STATIC RAM
Datasheet	IS62WV12816DALL-ISSI.pdf

IS62WV12816DALL Product details

Description

The ISSI IS62/65WV12816DALL/DBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.It is fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.When CS1 is HIGH (deselected) or when CS2 is low (deselected) or when CS1 is low, CS2 is high and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be

Features

High-speed access time: 35ns, 45ns, 55ns.
CMOS low power operation.
36 mW (typical) operating.
9 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply.
1.8V ± 10% Vdd (IS62/65WV12816DALL).
2.5V--3.6V Vdd (IS62/65WV12816DBLL).
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial and Autotmo.

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Published: Feb 18, 2024 |