IS62WV12816DBLL - ULTRA LOW POWER CMOS STATIC RAM

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ISSI

Datasheet Details

Part number	IS62WV12816DBLL
Manufacturer	ISSI
File Size	415.50 KB
Description	ULTRA LOW POWER CMOS STATIC RAM
Datasheet	IS62WV12816DBLL Datasheet
Note	This datasheet PDF includes multiple part numbers: IS62WV12816DBLL, IS62WV12816DALL. Please refer to the document for exact specifications by model.
Additional preview pages of the IS62WV12816DBLL datasheet.

Product details

Description

The ISSI IS62/65WV12816DALL/DBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.It is fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.When CS1 is HIGH (deselected) or when CS2 is low (deselected) or when CS1 is low, CS2 is high and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be

Features

High-speed access time: 35ns, 45ns, 55ns.
CMOS low power operation.
36 mW (typical) operating.
9 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply.
1.8V ± 10% Vdd (IS62/65WV12816DALL).
2.5V--3.6V Vdd (IS62/65WV12816DBLL).
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial and Autotmo.

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Other Datasheets by ISSI

IS62WV12816DALL - ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816ALL - ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL - ULTRA LOW POWER CMOS STATIC RAM
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Published: Feb 18, 2024 |