Description
The ISSI IS61WV3216DBLx and IS64WV3216DBLx
are high-speed, 524,288-bit static RAMs organized as
32,768 words by 16 bits.It is fabricated using ISSI's high-
performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provided by
Features
- HIGH SPEED: (IS61/64WV3216DBLL).
- High-speed access time: 8, 10, 12, 20 ns.
- Low Active Power: 135 mW (typical).
- Low Standby Power: 12 µW (typical)
CMOS standby LOW POWER: (IS61/64WV3216DBLS).
- High-speed access time: 25, 35 ns.
- Low Active Power: 55 mW (typical).
- Low Standby Power: 12 µW (typical)
CMOS standby.
- Single power supply.
- Vdd 2.4V to 3.6V (IS61/64WV3216DBxx).
- Fully static operation: no clock or refresh
requir.