The ISSI IS61WV12816DAxx/DBxx and IS64WV12816D- Bxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits.
It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit design techniques, yields high-performance
IS64WV12816DBLS Features
* HIGH SPEED: (IS61/64WV12816DALL/DBLL)
* High-speed access time: 8, 10, 12, 20 ns
* Low Active Power: 135 mW (typical)
* Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV12816DALS/DBLS)
* High-speed access time: 25, 35 ns
* Low Active Power:
IS61WV12816DALL_IntegratedSiliconSolution.pdf
Datasheet Details
IS64WV12816DBLS, IS61WV12816DALL
Integrated Silicon Solution
456.54 KB
128k x 16 high speed asynchronous cmos static ram.
This datasheet PDF includes multiple part numbers: IS64WV12816DBLS, IS61WV12816DALL.
Please refer to the document for exact specifications by model.
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